THE CHARACTERISTICS OF THE LATERAL IGBT ON THE THIN SOI FILM WHEN THECOLLECTOR VOLTAGE OF THE IGBT IS APPLIED TO THE SUBSTRATE

The characteristics of the lateral IGBT on the SOI film when the colle ctor voltage of the IGBT is applied to the substrate are investigated for its application to the high side switch. The measurements on the b locking capability and the dynamic latch-up current during the turn-of f transient under an inductive load are carried out with varying the t hickness of the SOI film. The 260 V IGBT can be fabricated on the 5 mu m thick SOI film without the special device structure. The dynamic lat ch-up current are improved bv reducing the SOI film thickness. This pa per exhibits that applying the collector voltage of the IGBT to the su bstrate makes it possible to improve the characteristics of the IGBT o n the thin SOI film.