HOT-ELECTRON DEGRADATION IN NMOSFETS - RESULTS FROM TEMPERATURE ANNEAL

0.6 Mum N-channel MOSFET's are hot-electron stressed at V(g) = V(d) = 8V, t = 10(3) s to produce large changes in device saturation drain cu rrent I(d), linear channel conductance g(d), maximum transconductance g(m), subthreshold slope S, and threshold voltage shift V(t). Isochron al post-stress anneal up to 300-degrees-C depopulates the trapped elec trons, resulting in substantial recovery of the hot-electron degradati on to within 10% of the pre-stress value. Gate-to-drain capacitance re veals that interface traps, which are also generated in significant nu mbers, are only partially annealed. These results provide direct confi rmation that trapped electrons rather than interface traps are mainly responsible for degradation in the following NMOSFET device parameters : I(d), g(d), g(m), S, V(t).