CU-CVD PROCESS OPTIMIZED IN A CLUSTER EQUIPMENT FOR IC MANUFACTURING

Authors
MARCADAL C RICHARD E MERMET JL TORRES J PALLEAU J ALAUX B BAKLI M
Citation
C. Marcadal et al., CU-CVD PROCESS OPTIMIZED IN A CLUSTER EQUIPMENT FOR IC MANUFACTURING, Microelectronic engineering, 33(1-4), 1997, pp. 3-13
Citations number
17
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
33
Issue
1-4
Year of publication
1997
Pages
3 - 13
Database
ISI
SICI code
0167-9317(1997)33:1-4<3:CPOIAC>2.0.ZU;2-5
Abstract
A complete optimisation of the copper CVD deposition was achieved with a bubbler delivery system. However the deposition rate was found to b e limited to 30 nm/min. With a DLI delivery system, a major improvemen t of the deposition rate 100 nm/min was achieved at high Cupraselect(R ) Bow rate with a void free deposition. The nucleation delay, the depo sition rate and the reproducibility were dramatically improved by wate r vapour addition. From the experimental results, an explanation has b een proposed for this effect.