COPPER METALLIZED TEST STRUCTURE

The presentation will describe a simple test structure for copper base d metallization systems. The test structure is manufactured by PVD dep osition of the metallization (diffusion barrier and copper) and by lif t-off patterning of the metallic lines. The passivation is realized by a SiO/SiN layer and the pad opening is carried out by RIE. Due to the lift-off patterning the copper line can be covered with the diffusion barrier completely. However, the thickness of the barrier varies near the break off. In order to compensate for this drawback the lift-off process is optimized by variation of the overhang of the resist mask. Results of computer simulations will be presented. The material charac terization is performed by microanalytical and electrical measurements .