ELECTRICAL-PROPERTIES OF COPPER-FILMS PRODUCED BY MOCVD

Authors
RIEDEL S ROBER J GESSNER T
Citation
S. Riedel et al., ELECTRICAL-PROPERTIES OF COPPER-FILMS PRODUCED BY MOCVD, Microelectronic engineering, 33(1-4), 1997, pp. 165-172
Citations number
12
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
33
Issue
1-4
Year of publication
1997
Pages
165 - 172
Database
ISI
SICI code
0167-9317(1997)33:1-4<165:EOCPBM>2.0.ZU;2-J
Abstract
To characterize blanket CVD copper films several analytical tests were carried out. The impurity concentrations were detected by secondary i on mass spectroscopy. Values lower than 0.2 at.% were found. Furthermo re some structural properties like grain sizes were investigated using transmission electron microscopy. The grain sizes were determined by TEM dark field images. The model by Mayadas and Shatzkes [1] will be d iscussed for the explanation of the higher resistivity of CVD deposite d copper films compared to the bulk value. It was found that the grain boundaries mainly contribute to this increased resistivity.