TFSOI (Thin-Film Silicon-On-Insulator) technology has made significant
progress recently. In this work, the titanium SALICIDE (Self-Aligned
siLICIDE) process has been studied, optimized and applied on a CMOS-co
mpatible TFSOI technology for low-voltage, low-power microwave applica
tions. The gate sheet resistance and total source/drain series resista
nce of a TFSOI NMOSFET with a 80 nm thick active silicon layer are 6.2
Omega/square and 700 Omega.mu m, respectively, with a 30 nm thick tit
anium disilicide on both the gate and source/drain areas. The maximum
oscillation frequency, f(max), of a 0.75 mu m TFSOI NMOSFET fabricated
with this technology is equal to 11 GHz for a supply voltage of 0.9 V
.