COPPER METALLIZATION OF TEFLON AF1600, USING EVAPORATION AND SPUTTERING, FOR MULTILEVEL INTERCONNECT DEVICES

Authors
POPOVICI D KLEMBERGSAPIEHA JE CZEREMUSZKIN G SACHER E MEUNIER M MARTINU L
Citation
D. Popovici et al., COPPER METALLIZATION OF TEFLON AF1600, USING EVAPORATION AND SPUTTERING, FOR MULTILEVEL INTERCONNECT DEVICES, Microelectronic engineering, 33(1-4), 1997, pp. 217-221
Citations number
10
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
33
Issue
1-4
Year of publication
1997
Pages
217 - 221
Database
ISI
SICI code
0167-9317(1997)33:1-4<217:CMOTAU>2.0.ZU;2-T
Abstract
X-ray photoelectron spectroscopy was used to assess the interaction of evaporated and sputter-deposited copper with Teflon AF1600. Both evap oration and sputtering caused defluorination, graphitization and cross linking of the carbon chains, as well as the formation of Cu-C bonds a nd C-O free radicals. Additionally, the higher energies of the sputter -deposited copper atoms led to a loss of oxygen and to the total react ion of the deposited copper as carbide and fluorides.