STATISTICAL METROLOGY FOR CHARACTERIZING CMP PROCESSES

Authors
PRASAD S LOH W KAPOOR A CHANG E STINE B BONING D CHUNG J
Citation
S. Prasad et al., STATISTICAL METROLOGY FOR CHARACTERIZING CMP PROCESSES, Microelectronic engineering, 33(1-4), 1997, pp. 231-240
Citations number
3
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
33
Issue
1-4
Year of publication
1997
Pages
231 - 240
Database
ISI
SICI code
0167-9317(1997)33:1-4<231:SMFCCP>2.0.ZU;2-C
Abstract
CMP processes are used to planarize layers; however, variations in ILD thickness due to various layout factors can affect the modelling of i nterconnect parameters. In this paper an overview of 'Statistical Metr ology' for CMP processes is presented. Using statistical metrology for CMP the process or interconnect design rules can be optimized for min imal variations.