DELAY SIMULATION BETWEEN AL SIO2 AND CU/BCB MULTILEVEL INTERCONNECT/

Numerical techniques used to model lossless quasi-TEM? behaviour of mu ltilevel interconnects are discussed and are then applied to a two lay er, five conductor interconnect structure of typical IC dimensions. Co mparisons are made between RC delays in Al/SiO2 and Cu/BCB interconnec t showing an approximately 40% delay reduction with the high conductiv ity, low dielectric constant combination.