EPITAXIAL-GROWTH OF INP0.88SB0.12 USING A STIBINE GENERATOR

Authors
MENNA RJ CAPEWELL DR MARTINELLI RU AYERS W MOULTON R PALMER J OLSEN G
Citation
Rj. Menna et al., EPITAXIAL-GROWTH OF INP0.88SB0.12 USING A STIBINE GENERATOR, Journal of crystal growth, 141(1-2), 1994, pp. 310-313
Citations number
17
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
141
Issue
1-2
Year of publication
1994
Pages
310 - 313
Database
ISI
SICI code
0022-0248(1994)141:1-2<310:EOIUAS>2.0.ZU;2-7
Abstract
An InP0.88Sb0.12 layer has been epitaxially deposited onto an n+ InP:S substrate using a stibine (SbH3) gas generator and a conventional met alorganic vapor phase epitaxy (MOVPE) reactor. A 0.7 mum thick layer w as deposited at a temperature of 600-degrees-C in 30 min using 250 SCC M of PH3 and 0.07 SCCM of SbH3. The layer was characterized using X-ra y diffraction, electron microprobe analysis, and SIMS.