STUDY OF EPITAXIAL-GROWTH OF AG ON HYDROGEN-TERMINATED SI(111) AND SI(100) SURFACES

We have employed reflection high energy electron diffraction (RHEED) t o study Ag films grown on hydrogen terminated Si(111) and Si(100) subs trates by molecular beam epitaxy. X-ray diffraction (XRD) and RHEED st udies indicate [111] oriented growth of Ag on Si(111) substrates both at room temperature and at 275-degrees-C with [011]Ag parallel-to [011 ]Si. Scanning electron microscopy (SEM) studies showed an island growt h (island size approximately 3000 angstrom) for the samples grown at 2 75-degrees-C. While XRD showed predominantly [100] oriented growth of Ag on Si(100) at room temperature, RHEED observations did not indicate a good epitaxial growth. The Ag films grown on Si(100) substrates at 275-degrees-C showed a [100] oriented epitaxial growth with [001]Ag pa rallel-to [001]Si. SEM showed an island growth (island size approximat ely 3000 angstrom) for the samples grown at 275-degrees-C.