J. Terry et al., PHOTOEMISSION-STUDY OF AU, GE, AND O2 DEPOSITION ON NH4F ETCHED SI(111), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1869-1875
Citations number
20
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
We have studied the interaction of a metal Au, a semiconductor Ge, and
a nonmetal O2, with the NH4F etched Si(111) surface with photoemissio
n spectroscopy. Two components were present in Si 2p core-level spectr
a from the H-terminated surface. We observed the flatband condition fr
om the as-etched, n - type, Si(111) surface. We performed stepwise dep
ositions of Au and measured the band bending with photoemission spectr
oscopy. The Fermi level pinned near midgap as Au was deposited onto th
e as-etched surface. After the deposition of 1 ML of Au, a Au-silicide
layer formed. This interfacial component indicated that the passivati
ng H layer was compromised. As the Au coverage was increased, layers o
f pure Au formed between the bulk silicon and the Au-silicide layer. T
he observed behavior was nearly identical to that of Au deposition on
the Si(111) 7 X 7 surface [Phys. Rev. Lett. 67, 2187 (1991)]. Next, we
tested the ability of the monohydride layer to sustain surfactant ass
isted growth of Ge. Ge islanding was observed at 400-degrees-C indicat
ing that good surfactant growth was not obtained. This was consistent
with the recent results of Sakai and Tatsumi [Appl. Phys. Lett. 61, 52
(1994)] who reported that the surface roughness was nearly the same f
or surfaces grown with or without H at this temperature. Although the
monohydride layer was not a good surfactant for the Si(111) surface at
this temperature, further study at different temperatures is needed t
o determine the ability of the ideal monohydride layer to act as a sur
factant. Finally, we observed no oxidation of the as-etched surface at
room temperature upon exposure to molecular oxygen.