REACTIVE ION ETCHING LAG INVESTIGATION OF OXIDE ETCHING IN FLUOROCARBON ELECTRON-CYCLOTRON-RESONANCE PLASMAS

Authors
JOUBERT O OEHRLEIN GS SURENDRA M ZHANG Y
Citation
O. Joubert et al., REACTIVE ION ETCHING LAG INVESTIGATION OF OXIDE ETCHING IN FLUOROCARBON ELECTRON-CYCLOTRON-RESONANCE PLASMAS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1957-1961
Citations number
4
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
12
Issue
4
Year of publication
1994
Part
2
Pages
1957 - 1961
Database
ISI
SICI code
0734-2101(1994)12:4<1957:RIELIO>2.0.ZU;2-O
Abstract
Recent selective oxide etching results obtained with an electron cyclo tron resonance high-density plasma reactor are presented. Reactive ion etching lag results of patterned SiO2 Samples etched with various flu orocarbon gases are discussed. A reactive ion etching lag mechanism wh ich is based on die dependence of the oxide etch rate on rf power is p roposed.