T. Lemogne et al., NATURE OF SUPER-LUBRICATING MOS2 PHYSICAL VAPOR-DEPOSITION COATINGS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1998-2004
Citations number
26
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
MoS2 is a well-known solid lubricant used for space applications. Radi
o frequency (rf) magnetron sputtered MoS2 filMS are being used increas
ingly, due to an ultra-low friction behavior in high vacuum (friction
coefficient: approximately 0.01). MoS2 coatings with a super-low frict
ion behavior (friction coefficient: approximately 0.001) have been rec
ently synthesized in an ultra-high vacuum tribometer equipped with a r
f magnetron sputtering device. Physicochemical and structural characte
rizations of the thin films have been carried out using XPS (x-ray pho
toelectron spectroscopy) and AES (Auger electron spectroscopy) to dete
rmine the extreme surface composition, HRTEM (high-resolution transmis
sion electron microscopy), GXRD (grazing-angle x-ray diffraction) for
structural investigations, RBS (Rutherford backscattering spectrometry
) for thickness and stoichiometry determination, and NBS (nuclear back
scattering spectrometry) for quantitative analysis of oxygen contamina
tion. Indentation tests at nanometric scale have also been performed t
o compare the mechanical constants (Young modulus, hardness) of the sp
uttered MoS2 films with the characteristics of molybdenite and to conf
irm the overall data. The coatings are made of highly pure, stoichiome
tric MoS2, with a polycrystalline microstructure (grain size on the or
der of 10 nm). The stoichiometry is MoS1.97+/-0.1000.10+/-0.01. Most o
f the grains are ''edge-oriented'' on the substrate surface [relative
to their (002) basal planes], with an azimuthal disorder of die other
crystallographic directions [(100) and (110)]. Consequently, and by co
mparison with already published data, the super-low friction regime is
found to be associated with the purity and microstructure of the coat
ing.