CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY AND SPECTROSCOPY OF PASSIVATED III-V HETEROSTRUCTURES

Authors
GWO S SMITH AR CHAO KJ SHIH CK SADRA K STREETMAN BG
Citation
S. Gwo et al., CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY AND SPECTROSCOPY OF PASSIVATED III-V HETEROSTRUCTURES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 2005-2008
Citations number
15
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
12
Issue
4
Year of publication
1994
Part
2
Pages
2005 - 2008
Database
ISI
SICI code
0734-2101(1994)12:4<2005:CSASOP>2.0.ZU;2-6
Abstract
Structural and electronic properties of Al0.3Ga0.7As/GaAs heterojuncti on and GaAs pn junction systems are investigated by cross-sectional sc anning tunneling microscopy and spectroscopy (XSTM/S). The cross-secti onal samples were prepared by passivating ex situ with a sulfide [(NH4 )2S] solution and were transferred into an ultra-high vacuum system fo r STM/S studies. It is found that passivated samples are advantageous for the measurements of scanning tunneling spectroscopy. The STM/S res ults and the experimental details are reported.