IMAGING EXTRINSIC DEFECTS AT THE NISI2 SI(111) METAL-SEMICONDUCTOR INTERFACE/

Authors
KUBBY JA GREENE WJ
Citation
Ja. Kubby et Wj. Greene, IMAGING EXTRINSIC DEFECTS AT THE NISI2 SI(111) METAL-SEMICONDUCTOR INTERFACE/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 2009-2016
Citations number
48
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
12
Issue
4
Year of publication
1994
Part
2
Pages
2009 - 2016
Database
ISI
SICI code
0734-2101(1994)12:4<2009:IEDATN>2.0.ZU;2-G
Abstract
The scanning tunneling microscope is used to image properties of the b uried NiSi2/Si(111) Metal-semiconductor interface using electron inter ferometry. This technique reveals the presence of multiple domains in conductance images that are not visible in topographic images. The mul tiple domains are explained in terms of silicide regions of different thicknesses that are separated by step domain boundaries at the buried interface. The possible influence of these extrinsic defects on the f ormation of the Schottky barrier and on local real space characterizat ion techniques used to measure Schottky barrier heights are discussed.