Ja. Kubby et Wj. Greene, IMAGING EXTRINSIC DEFECTS AT THE NISI2 SI(111) METAL-SEMICONDUCTOR INTERFACE/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 2009-2016
Citations number
48
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
The scanning tunneling microscope is used to image properties of the b
uried NiSi2/Si(111) Metal-semiconductor interface using electron inter
ferometry. This technique reveals the presence of multiple domains in
conductance images that are not visible in topographic images. The mul
tiple domains are explained in terms of silicide regions of different
thicknesses that are separated by step domain boundaries at the buried
interface. The possible influence of these extrinsic defects on the f
ormation of the Schottky barrier and on local real space characterizat
ion techniques used to measure Schottky barrier heights are discussed.