PARTICLE GROWTH OF PALLADIUM ON EPITAXIAL TIN OXIDE THIN-FILMS

Citation
Ge. Poirier et al., PARTICLE GROWTH OF PALLADIUM ON EPITAXIAL TIN OXIDE THIN-FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 2149-2152
Citations number
10
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
ISSN journal
07342101
Volume
12
Issue
4
Year of publication
1994
Part
2
Pages
2149 - 2152
Database
ISI
SICI code
0734-2101(1994)12:4<2149:PGOPOE>2.0.ZU;2-3
Abstract
Thin films of SnO2 were deposited on r-axis Al2O3 and characterized us ing scanning tunneling microscopy (STM), low energy electron diffracti on, and x-ray photoelectron spectroscopy (XPS). The films grew in an e pitaxial, layer-by-layer mode. A small miscut of the Al2O3 substrate ( 0.2-degrees) resulted in parallel, uniformly-spaced, monatomic steps o n the SnO2 film surface. Pd was deposited on the SnO2 films and charac terized by STM and XPS. Below 2 monolayers, the Pd formed 10-20 nm isl ands with an apparent height of 0.5 nm. Increasing the Pd coverage eve ntually results in a continuous metal film that retains the granular s urface topography of the isolated particle film. Annealing the films c reated a population of reduced metallic Sn that we attribute to Sn-Pd alloying but no significant change in the palladium particle morpholog y was observed.