FREE-ELECTRON LASER SPECTROSCOPY OF SEMICONDUCTORS AND INTERFACES

Authors
MCKINLEY JT ALBRIDGE RG BARNES AV CHEN GC DAVIDSON JL LANGUELL ML POLAVARAPU PL SMITH JF YANG X UEDA A TOLK N COLUZZA C BAUDAT PA DUPUY C GOZZO F IILEGEMS M MARTIN D MORIERGENOUD F RUDRA A TUNCEL E MARGARITONDO G
Citation
Jt. Mckinley et al., FREE-ELECTRON LASER SPECTROSCOPY OF SEMICONDUCTORS AND INTERFACES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 2323-2326
Citations number
28
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
12
Issue
4
Year of publication
1994
Part
2
Pages
2323 - 2326
Database
ISI
SICI code
0734-2101(1994)12:4<2323:FLSOSA>2.0.ZU;2-F
Abstract
The broad tunability (1-10 mum) and megawatt regime peak intensity ava ilable from the Vanderbilt Free-Electron Laser is opening new avenues in semiconductor research. Initial experiments in nonlinear optical ab sorption and heterojunction band-edge discontinuity measurements are d iscussed in order to illustrate the flexibility of the free-electron l aser as a research tool.