SECONDARY-ION MASS-SPECTROMETRY RELATIVE SENSITIVITY FACTORS FOR RU, RH, PR, EU, TM, LU, RE, OS, AND IR

The elements Ru, Rh, Pr, Eu, Tm, Lu, Re, Os, and Ir have been successf ully implanted into Si, and, in some cases, GaAs, in order to quantify secondary ion mass spectrometry (SIMS). SIMS relative sensitivity fac tors have been determined for these elements for both oxygen and cesiu m primary bombardment and positive and negative secondary ions, respec tively. Molecular ions were also monitored based on data from other st udies and some poor secondary atomic ion yield for certain elements, e .g., Re. Relative ion yield enhancement for certain molecules is discu ssed. Relevance to geological applications is noted for the elements R u, Rh, Os, and Ir.