HOT-CARRIER EFFECTS ON ANALOG PERFORMANCE OF N-MOSFETS AND P-MOSFETS WITH OXYNITRIDE GATE DIELECTRICS

Authors
JOSHI AB KWONG DL
Citation
Ab. Joshi et Dl. Kwong, HOT-CARRIER EFFECTS ON ANALOG PERFORMANCE OF N-MOSFETS AND P-MOSFETS WITH OXYNITRIDE GATE DIELECTRICS, I.E.E.E. transactions on electron devices, 41(8), 1994, pp. 1465-1467
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
8
Year of publication
1994
Pages
1465 - 1467
Database
ISI
SICI code
0018-9383(1994)41:8<1465:HEOAPO>2.0.ZU;2-#
Abstract
In this paper we report the impact of hot-carrier-stress on analog per formance of n- and p-MOSFET's with conventional oxide, NH3-nitrided ox ide (RTN) and reoxidized nitrided oxide (RTN/RTO) as gate dielectrics. Changes due to hot-carrier stress in crucial analog parameters viz., drain output resistance, voltage gain, and input offset voltage of a s ource coupled differential MOSFET pair are investigated. Results show that RTN/RTO gate dielectrics suppress degradation of analog parameter s in n-MOSFET's but increase it slightly in p-MOSFET's, as compared to conventional oxide MOSFET's.