A COMPARATIVE-STUDY OF N+ OHMIC CONTACT RESISTANCE FOR PDINGE AND NIGEAU METALLIZATIONS ON GAAS

Authors
BROOKS MB SIGMON TW
Citation
Mb. Brooks et Tw. Sigmon, A COMPARATIVE-STUDY OF N+ OHMIC CONTACT RESISTANCE FOR PDINGE AND NIGEAU METALLIZATIONS ON GAAS, I.E.E.E. transactions on electron devices, 41(8), 1994, pp. 1469-1471
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
8
Year of publication
1994
Pages
1469 - 1471
Database
ISI
SICI code
0018-9383(1994)41:8<1469:ACONOC>2.0.ZU;2-6
Abstract
NiGeAu and PdInGe metallizations are used for n+ ohmic contacts to GaA s. One-dimensional analytic and two-dimensional numerical analyses are presented using experimental data obtained from transmission line and cross bridge Kelvin test structures. Results from the 1-D and 2-D mod els show that the former analysis overestimates the specific contact r esistance by at least an order of magnitude. This discrepancY is shown to be test structure dependent and metallization independent.