Sp. Fusselman et Hk. Yasuda, AN OVERALL MECHANISM FOR THE DEPOSITION OF PLASMA POLYMERS FROM METHANE IN A LOW-PRESSURE ARGON PLASMA-JET, Plasma chemistry and plasma processing, 14(3), 1994, pp. 277-299
An overall mechanism for plasma polymer deposition from a methane-seed
ed argon plasma jet was established from experimental measurements and
a simplified model of reaction kinetics within the plasma jet. Total
mass deposition rates were obtained at various substrate positions and
methane flow rates. Methane consumption was estimated from residual g
as analysis. The influence of substrate coolant temperature on deposit
ion rate was evaluated. The model was based on particle densities, jet
temperature, and jet velocity data published previously, and reaction
rate constants from the literature were used. No adjustable parameter
s were employed in this model. Experimental results for total depositi
on rate and methane consumption were in good agreement with model pred
ictions, The overall deposition mechanism consists of three steps: Pen
ning ionization of methane by excited argon neutrals, followed by diss
ociative recombination of CH(x)+ to yield CH, followed by incorporatio
n of CH into the growing film upon impact. Contributions of species ot
her than CH to the total deposition rate are minor, and adsorption is
not a prerequisite for incorporation into the growing film.