X-RAY TRIPLE-CRYSTAL DIFFRACTOMETRY OF DEFECTS IN EPITAXIAL LAYERS

Citation
V. Holy et al., X-RAY TRIPLE-CRYSTAL DIFFRACTOMETRY OF DEFECTS IN EPITAXIAL LAYERS, Journal of applied crystallography, 27, 1994, pp. 551-557
Citations number
12
Categorie Soggetti
Crystallography
ISSN journal
00218898
Volume
27
Year of publication
1994
Part
4
Pages
551 - 557
Database
ISI
SICI code
0021-8898(1994)27:<551:XTDODI>2.0.ZU;2-4
Abstract
A new method is developed for calculating the correlation function of the random deformation in heteroepitaxic layers and superlattices from measurements of iso-intensity contours of diffuse X-ray scattering. T he method is based on the optical coherence approach and kinematical d iffraction theory. Structural models have been found that enable the c orrelation functions to be calculated for various types of randomly pl aced defects (mosaic blocks and random elastic deformation). The appli cability of the method has been demonstrated by measuring the diffuse X-ray scattering from a ZnTe layer grown on a GaAs substrate. The para meters characterizing the defects were obtained from a comparison of t he calculated correlation function with theoretical models.