AN ACCURATE AND COMPUTATIONALLY EFFICIENT SEMIEMPIRICAL MODEL FOR ARSENIC IMPLANTS INTO SINGLE-CRYSTAL (100) SILICON

In this paper is reported an accurate and computationally efficient se mi-empirical model based on an extensive set of experimental data for arsenic implants into (100) single-crystal silicon. Experimental and m odel development details are given, and issues of the measurements are discussed. The newly developed model has explicit dependence on tilt angle, rotation angle, and dose, in addition to energy. Comparisons be tween the model predictions and experimental data are made in order to demonstrate the accuracy of this model.