PROPERTIES OF MIS STRUCTURES PREPARED ON INGAASSB QUATERNARY SOLUTIONS BY ANODIC-OXIDATION

Authors
POLYAKOV AY MILNES AG SMIRNOV NB KOZHUKHOVA EA DRUZHININA LV GOVORKOV AV DOLGINOV LM TUNITSKAYA IV
Citation
Ay. Polyakov et al., PROPERTIES OF MIS STRUCTURES PREPARED ON INGAASSB QUATERNARY SOLUTIONS BY ANODIC-OXIDATION, Solid-state electronics, 37(10), 1994, pp. 1691-1694
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
10
Year of publication
1994
Pages
1691 - 1694
Database
ISI
SICI code
0038-1101(1994)37:10<1691:POMSPO>2.0.ZU;2-Z
Abstract
Properties of metal-insulator-semiconductor (MIS) structures prepared on InAs, InSb, GaSb and InGaAsSb samples are reported. It is shown tha t even a slight shift of composition from InAs towards InGaAsSb consid erably improves the surface properties of the material. A good correla tion between the carrier concentration in n-InGaAsSb and p-InGaAsSb de duced from C-V measurements and from van der Pauw measurements is obse rved, and C-V MIS measurements are suggested as a means of rapid asses sment of electrical quality of such layers.