NARROW GATE EFFECT ON DEPLETION MODE INSULATED GATE FIELD-EFFECT TRANSISTOR

Authors
HALDAR S KHANNA MK GUPTA RS
Citation
S. Haldar et al., NARROW GATE EFFECT ON DEPLETION MODE INSULATED GATE FIELD-EFFECT TRANSISTOR, Solid-state electronics, 37(10), 1994, pp. 1717-1721
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
10
Year of publication
1994
Pages
1717 - 1721
Database
ISI
SICI code
0038-1101(1994)37:10<1717:NGEODM>2.0.ZU;2-5
Abstract
An analytical method is presented to predict the I(d)-V(d) characteris tics and threshold voltage of narrow gate depletion mode MOSFET. It is shown that the threshold voltage expression developed is simple and v alid for all gate width. The generalized expressions of threshold volt age and drain current in linear and saturation region are compared wit h the experimental results of wide channel depletion mode MOSFETs and the increase of threshold voltage and reduction of drain current with gate width is established as predicted by other experimental/simulatio n results.