TIME-DOMAIN MODELING OF A MICROWAVE SCHOTTKY DIODE

Time domain technique is introduced to demonstrate an efficient way of modeling microwave devices with non-linearity. A microwave Schottky d iode, represented by a lumped model, is used in this paper to illustra te the time domain technique. A fast transition pulse is applied to th e diode under zero-bias and forward-bias conditions. Reflected signals are measured using the time domain reflectometry (TDR) technique. Bas ed on time domain analysis of the diode model as well as wave propagat ion on a transmission line, a set of differential equations are solved numerically and iteratively using the measured incident pulse as an e nforced excitation. The lumped element values are extracted by compari ng the simulated and the measured waveforms. The non-linearity of the diode are modeled accurately and efficiently using this technique. The method used demonstrates the advantages of time domain techniques ove r the conventional frequency domain technique in modeling nonlinear de vices.