Ml. Shek et al., PRELIMINARY SOFT-X-RAY STUDIES OF BETA-SIC, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1079-1084
Citations number
28
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
We have looked at beta-SiC with soft x-ray emission and photoemission
spectroscopy. From the Si L23 and C K emissions, the Si s + d-like and
C p partial density of states in the bulk valence band are identified
and compared with valence band photoemission. In addition to bulk ele
ctronic structural features, photoemission from a (3 X 2) Si-rich surf
ace shows two surface-derived valence features at approximately - 2.6
and approximately - 1.6 eV relative to the Fermi level. The intensitie
s of these valence features vary as those of surface Si 2p core level
components shifted by - 0.5 and - 1.4 eV from the bulklike SiC Si 2p c
ore level. We have also used the Si L23 absorption edge as a probe of
the unfilled states near the conduction band minimum.