Cp. Fictorie et al., KINETIC AND MECHANISTIC STUDY OF THE CHEMICAL-VAPOR-DEPOSITION OF TITANIUM-DIOXIDE THIN-FILMS USING TETRAKIS-(ISOPROPOXO)-TITANIUM(IV), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1108-1113
Citations number
21
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
The mechanism of TiO2 thin film deposition on single crystal TiO2 by c
hemical vapor deposition (CVD) using tetrakis(isopropoxo)titanium(IV)
(TTIP) has been investigated. The structure of the rutile(100) surface
has been shown to form a 1 X 3 reconstruction using reflection high-e
nergy electron diffraction. Temperature programmed reaction spectrosco
py and molecular beam scattering have been employed to probe the kinet
ics of the reaction of TTIP and to identify reaction products. The dep
osition mechanism involves two parallel pathways to form TiO2: at lowe
r temperatures (500-650 K) propene and isopropanol are formed as produ
cts; at higher temperatures (>650 K) propene and water are formed as p
roducts in a second pathway that becomes dominant. An activation energ
y of 57 +/- 8 kJ/mol has been measured for the first pathway. The resu
lts for the single crystal surface are compared to earlier work on pol
ycrystalline substrates.