GROWTH AND CHARACTERIZATION OF SI1-XGEX SI MULTILAYERS ON PATTERNED SI(001) SUBSTRATES USING GAS-SOURCE MOLECULAR-BEAM EPITAXY

Authors
ZHANG J MARINOPOULOU A HARTUNG J LIGHTOWLERS EC ANWAR N PARRY G XIE MH MOKLER SM WU XD JOYCE BA
Citation
J. Zhang et al., GROWTH AND CHARACTERIZATION OF SI1-XGEX SI MULTILAYERS ON PATTERNED SI(001) SUBSTRATES USING GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1139-1141
Citations number
7
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
12
Issue
4
Year of publication
1994
Part
1
Pages
1139 - 1141
Database
ISI
SICI code
0734-2101(1994)12:4<1139:GACOSS>2.0.ZU;2-5
Abstract
Ridges developing during growth of a Si buffer layer on a Si(001) subs trate patterned with V grooves, are utilized as an alternative approac h to quantum wire fabrication by gas source molecular beam epitaxy. Se condary electron microscopy indicates the advantages in quality and de finition of those microstructures over quantum wells grown in the vert ex of V grooves. Photoluminescence results of multiple quantum well (M QW) structures grown on patterned substrates, show the existence of a more spatially confined structure and that the MQWs are almost free of dislocations.