Rj. Shul et al., INVESTIGATION OF PLASMA ETCH INDUCED DAMAGE IN COMPOUND SEMICONDUCTOR-DEVICES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1351-1355
Citations number
16
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
We have investigated the electrical performance of mesa-isolated GaAs
pn-junction diodes to determine the plasma-induced damage effects from
reactive ion and reactive ion beam etching (REBE). A variety of plasm
a chemistries (SiCl4, BCl3, BCl3/Cl2, and Cl2) and ion energies rangin
g from 100 to 400 eV were studied. We have observed that many of the r
eactive ion etching BCl3/Cl2 plasmas and RIBE Cl2 plasmas yield diodes
with low reverse-bias currents that are comparable to the electrical
characteristics of wet-chemical-etched devices. The reverse-bias leaka
ge currents are independent of surface morphology and sidewall profile
s.