Dl. Pappas et J. Hopwood, DEPOSITION OF DIAMOND-LIKE CARBON USING A PLANAR RADIO-FREQUENCY INDUCTION PLASMA, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1576-1582
Citations number
39
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
The use of a planar radio frequency inductively coupled plasma for the
preparation of diamondlike carbon (DLC) thin films is investigated. T
his approach offers a number of advantages over conventional rf parall
el plate plasma processes for studying the deposition of DLC. In the l
atter case, substrate ion bombardment energy is determined by the rf s
elf-bias which is a function of discharge power. For the rf induction
plasma, discharge power absorption and rf substrate bias are decoupled
, allowing independent evaluation of the effects of each parameter. Al
ong with these quantities, the influence of CH4 flow rate and Ar dilut
ion are investigated. Film properties examined include hardness, stres
s, optical transmittance, and hydrogen concentration. In addition, pla
sma optical emission spectra have been collected under various conditi
ons. Films deposited at room temperature are found to be typical of DL
C prepared by conventional plasma enhanced chemical vapor deposition p
rocesses, with microhardness values up to 30 GPa, optical bandgaps bet
ween 1.3 and 1.8 eV, and hydrogen content ranging from 20% to 36%. The
planar geometry and high degree of dissociation in the rf induction p
lasma permit the coating of large areas at high rates (>1000 angstrom/
min). Other observations include a maximum in the hardness versus subs
trate bias curve.