ATOMIC-RESOLUTION ELECTRON-MICROSCOPE IMAGES FORMED BY SIL(3)-IONIZATION ELECTRONS

Contrast of energy-filtered electron microscope images with atomic res olution of Si atoms producing SiL(3)-ionization electrons in a Si crys tal is discussed. The localization width of the inelastic scattering p otential is deduced from the inelastic scattering factor for SiL(3)-io nization, which is based on a program for a modified hydrogenic L-shel l cross section. The image contrast at the bottom surfaces of the Si c rystals containing a single inelastic scattering layer at the top, mid dle and bottom layers showed diffuse, sharp and very sharp image contr ast, i.e. top-bottom effect is predominant. Similar images of an atom which scattered electrons inelastically with a very small energy loss in an aluminum crystal were calculated and it is noted that the atomic structure of aluminum is observed.