HIGH-QUALITY IN0.53GA0.47AS ON EXACTLY (001)-ORIENTED SI GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY

In this paper we report on results of an optimized growth process of I n0.53Ga0.47As on exactly (001)-oriented Si substrates by low-pressure metal-organic vapour-phase epitaxy (LP-MOVPE). The crystalline perfect ion of the InGaAs as weft as an intermediate layer sequence consisting of GaAs, InP and an InGaAs/InP superlattive was examined by transmiss ion electron microscopy, X-ray diffractometry, and dislocation etching . Electrical and optical characterization were performed using electro chemical capacitance-voltage profiling and photoluminescence spectrosc opy. The InGaAs layer exhibits a lattice mismatch of 1x10(-3) to InP, an etch-pit density of 1.3x10(8) cm(-2), full widths at half maximum o f 210 arcsec of the (004) X-ray reflex and of 15 meV of the excitonic photoluminescence peak at 2 K as well as a background doping concentra tion of 4x10(16) cm(-3). Using this layer high-performance photodetect ors for the long-wavelength range were fabricated.