SELECTIVE-AREA GROWTH OF GAP ON SI BY MOCVD

Single crystals of Gap were grown on 4 degrees miscut (100) Si substra tes by selective area metalorganic chemical vapor deposition. Silicon nitride patterns were used to mask the wafer; no GaP nucleated on the silicon nitride patterns. The top and side walls of the selectively gr own Gap stripes (3 mu m width) seem to be the (100) and (111) crystal planes. Cross-sectional TEM analysis revealed a smooth GaP-Si interfac e. Focused Raman spectroscopy with a spatial resolution of similar to 1 mu m was used to assess the crystal quality of individual Gap mesas.