THE CHARACTERIZATION OF ZNSE GAAS EPILAYERS GROWN BY HOT-WALL EPITAXY/

ZnSe/GaAs, ZnSe:Zn/GaAs, ZnSe:Zn/GaAs (annealed in Zn vapor) and ZnSe/ GaAs (annealed in Se vapor) epilayers on (100) GaAs substrates have be en grown by hot wall epitaxy under Various growth conditions. X-ray do uble crystal rocking curves and photoluminescence measurements confirm ed the good quality of the grown epilayers. The X-ray rocking curves s how a FWHM value for the 0.37 mu m thick ZnSe epilayer of 161 arcsec a nd a lattice mismatch between the (100) ZnSe epilayer and the (100) Ga As substrate of 0.27%. Photoluminescence studies indicate that the ori gin of the I-2 peak at 2.794 eV is associated with V-Se at a neutral d onor. It is also confirmed that the binding energy of the bound excito n(D-0, X), E(BX)(b) is 14 meV and the binding energy, E(D), is 70 meV.