UNTRADITIONALLY DOPED CZ-GROWN SILICON FOR POWER DEVICES

Authors
SALNICK ZA MIKLYAEV YA SALNICK OS NAUMOV AV PHOMICHEV AV
Citation
Za. Salnick et al., UNTRADITIONALLY DOPED CZ-GROWN SILICON FOR POWER DEVICES, Journal of crystal growth, 172(1-2), 1997, pp. 120-123
Citations number
8
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
172
Issue
1-2
Year of publication
1997
Pages
120 - 123
Database
ISI
SICI code
0022-0248(1997)172:1-2<120:UDCSFP>2.0.ZU;2-Q
Abstract
A new method is developed for n-type, high-resistivity (up to 150 Omeg a . cm), targe-diameter (up to 125 mm), low-cost silicon crystals for power devices such as diodes, thyristors and transistors. The required resistivity of silicon is achieved during both crystal growth and pow er device manufacturing processes. The main properties of UDCz silicon and some parameters of the transistors made from this silicon are pre sented.