MECHANISM OF C-60 CRYSTAL-GROWTH FROM THE VAPOR

The crystal growth of C-60 from the vapour phase has been studied by s urface topography of slowly cooled and quenched crystals. Two growth m echanisms were found to be present: hopper growth and step growth from dislocation and eventually other defect sources. The results were int erpreted using existing crystal growth theories concerning volume tran sport, surface migration and kink integration limited growth. On the b asis of step shapes and growth rates it was concluded that the growth is determined by volume and surface diffusion.