Hollow-cone illumination in the electron microscope improves significa
ntly the resolution in the images of thin crystalline specimens. Optim
um imaging parameters are obtained by maximizing the central contrast
of a weak point scatterer. The gain in resolution is demonstrated by m
eans of simulated images of silicon in [110] orientation (dumbbell str
ucture) and of YBa2Cu3O7 in [100] orientation.