HIGH-CARBON DOPING OF GAAS USING TRISDIMETHYLAMINOARSENIC AND TRIMETHYLGALLIUM IN CHEMICAL BEAM EPITAXY

The growth of GaAs by chemical beam epitaxy (CBE) using trisdimethylam inoarsenic (DMAAs) and trimethylgallium (TMG) sources was investigated . DMAAs was introduced into the chamber directly from its vapour press ure, without precracking. During GaAs growth, the chamber pressure was in the 10(-7) Torr range, at least one order of magnitude lower than with arsine. The DMAAs + TMG source combination resulted in p-type lay ers in the range 10(18) - 10(19) cm-3. From cathodoluminescence measur ements these GaAs layers proved to be as good as those grown with arsi ne. This study shows that TMG can be suitable p-type dopant for GaAs w hen combined with DMAAs.