GROWTH OF A GAP WINDOW LAYER ON ALGAINP LIGHT-EMITTING-DIODES USING MISORIENTED SUBSTRATES

The growth and properties of high performance AlGaInP double-heterostr ucture 616 nm light-emitting diodes grown on misoriented substrates by using a 7.5 mum thick GaP window layer are presented. The GaP layer i s grown on top of the heterostructure by low-pressure metalorganic vap or phase epitaxy at a growth rate of 10 mum/h. A significant improveme nt in the surface morphology and device performance can be obtained by utilizing both misoriented substrates as high as 15-degrees from (100 ) toward the [011] direction and the growth of GaP at a higher tempera ture of 800-degrees-C. An external quantum efficiency of 3.5% is obtai ned in this way.