CHARACTERIZATION OF ZNSSE ON GAAS BY ETCHING AND X-RAY-DIFFRACTION

Authors
KAMATA A MITSUHASHI H
Citation
A. Kamata et H. Mitsuhashi, CHARACTERIZATION OF ZNSSE ON GAAS BY ETCHING AND X-RAY-DIFFRACTION, Journal of crystal growth, 142(1-2), 1994, pp. 31-36
Citations number
12
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
142
Issue
1-2
Year of publication
1994
Pages
31 - 36
Database
ISI
SICI code
0022-0248(1994)142:1-2<31:COZOGB>2.0.ZU;2-7
Abstract
Zinc sulfoselenide epitaxial layers grown on GaAs substrates have been characterized by etch pit density (EPD) and full width at half maximu m (FWHM) of double-crystal X-ray rocking curves. EPD was observed on a (100) ZnSxSe1-x/GaAs surface. The etching solution of 0.04% bromine-m ethanol at 3-degrees-C was found to work well for EPD measurement. EPD on the ZnSe epilayers was about 10(7) cm-2 for the general growth con ditions, but was as low as 10(4) cm-2 for lattice-matched ZnSxSe1-x ep itaxial layers which gave the narrowest FWHM of 13.6 arc sec.