DEFECT-FREE STRANSKI-KRASTANOV GROWTH OF STRAINED SI1-XGEX LAYERS ON SI

Strained Si1-xGex epitaxial layers on silicon are known to exhibit a n on-planar surface under certain growth conditions. In the present work , combined transmission electron microscopy and atomic force microscop y (AFM) are employed to reveal the appearance and growth of surface un dulations which form in diluted Si1-xGex alloys. On the basis of these experiments and theoretical considerations, the possible causes of su ch a surface rippling are reviewed and discussed. It appears that the partial relaxation of the elastic energy, permitted by the undulations themselves, is the driving force of this phenomenon, what is referred as defect-free Stranski-Krastanov growth mode. AFM measurements permi t one also to quantify the kinetics of appearance and growth of the un dulations occurring during deposition. It is found that the amplitude of the undulations follows an exponential variation with the depositio n time/film thickness. Finally we propose a simple model based on part ial elastic relaxation (driving force) and on surface diffusion (limit ative mechanism) to describe our experimental kinetics of the surface ripples during the very first steps.