RADIATIVE CONDUCTIVE HEAT-TRANSFER MECHANISM OF THE LIMITATION IN ALPHA-HGI2 CRYSTAL VAPOR GROWTH

An analytic study of the radiative/conductive heat transfer in alpha-H gI2 crystal growth is performed. The considered model shows that the r adiative/conductive limitation of the crystal size takes place in an l arge-diameter apparatus in which the IR radiation surrounding the grow th surface may be larger than that on the source surface. However, the calculations performed show that this limitation can be eliminated in crystal growth by appropriate adjustment of the temperatures at ampou le walls.