FURNACE GROWN GATE OXYNITRIDE USING NITRIC-OXIDE (NO)

Authors
OKADA Y TOBIN PJ REID KG HEGDE RI MAITI B AJURIA SA
Citation
Y. Okada et al., FURNACE GROWN GATE OXYNITRIDE USING NITRIC-OXIDE (NO), I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1608-1613
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
9
Year of publication
1994
Pages
1608 - 1613
Database
ISI
SICI code
0018-9383(1994)41:9<1608:FGGOUN>2.0.ZU;2-6
Abstract
Gate oxynitride was grown in NO for the first time. This approach can provide a tight N accumulation near the Si/SiO2 interface. Much lower thermal budget is required for an NO process than for an N2O process t o produce an oxynitride with useful properties. Submicron MOSFET's wit h NO oxynitride showed superior current drive characteristics and comp arable hot carrier immunity to those with N2O oxynitride.