EFFECTS OF THE VELOCITY SATURATED REGION ON MOSFET CHARACTERISTICS

Authors
TAKEUCHI K FUKUMA M
Citation
K. Takeuchi et M. Fukuma, EFFECTS OF THE VELOCITY SATURATED REGION ON MOSFET CHARACTERISTICS, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1623-1627
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
9
Year of publication
1994
Pages
1623 - 1627
Database
ISI
SICI code
0018-9383(1994)41:9<1623:EOTVSR>2.0.ZU;2-C
Abstract
A simple, accurate and universal relationship between MOSFET drain cur rent in saturation, effective channel length, and gate drive has been found. It can be explained by a simple analytical model, whose validit y is supported by numerical simulation. The model shows that the lengt h of a velocity saturated region is a crucial parameter for describing MOSFET performance, particularly for short channel devices. The shrin kage of the length deteriorates the merit of channel length scaling.