LOW FORWARD DROP JBS RECTIFIERS FABRICATED USING SUBMICRON TECHNOLOGY

This paper demonstrates the impact of using submicron technology (0.5 mum design rules) on JBS Rectifiers to achieve very low forward voltag e drops while maintaining good high temperature reverse blocking chara cteristics. Two dimensional numerical simulations show that decreasing P+-junction width and depth improves the on-state voltage drop by imp roved utilization of the active area for the Schottky region and impro ved spreading of majority carrier current from the Schottky contact. E xperimental results that demonstrate the capability to reduce the forw ard drop from 0.5 V to 0.25 V, while operating at up to 125-degrees-C- 175-degrees-C with good reverse blocking capability, are presented. Th e tradeoff curves between forward drop and reverse leakage current sho w 45x reduction in leakage current for the same forward drop as compar ed to previous reports on JBS rectifiers. Power dissipation analysis i ndicates higher operating temperatures, (100-degrees-C for Ti-JBS and 175-degrees-C for Cr-JBS rectifiers) with reduced heat sink sizes for the JBS Rectifiers when compared to the conventional Schottky Barrier Diode (SBD).