A DEVICE MODEL FOR AN ION-IMPLANTED MESFET WITH HALF-PEARSON AND HALF-GAUSSIAN DISTRIBUTION UNDER POST-ANNEAL CONDITIONS

Authors
HALDAR S",MANEESHA,"KHANNA MK GUPTA RS
Citation
Mk. Haldar S",maneesha,"khanna et Rs. Gupta, A DEVICE MODEL FOR AN ION-IMPLANTED MESFET WITH HALF-PEARSON AND HALF-GAUSSIAN DISTRIBUTION UNDER POST-ANNEAL CONDITIONS, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1674-1677
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
9
Year of publication
1994
Pages
1674 - 1677
Database
ISI
SICI code
0018-9383(1994)41:9<1674:ADMFAI>2.0.ZU;2-M
Abstract
A model is developed for an ion-implanted long channel silicon MESFET in terms of Half-Pearson-IV and Half-Gaussian distribution. Reasonable approximations have been made to obtain simplified solution of Poisso n's equation. It is seen that approximate Gaussian profile and exact H alf-Pearson-IV Half-Gaussian profile gives exactly the same I(d)-V(d) curves. It is also observed that the threshold voltage gets reduced in the later case.