CORRELATION BETWEEN SUBSTRATE HOT-ELECTRON ENERGY AND HOMOGENEOUS DEGRADATION IN N-MOSFETS

Authors
SELMI L FIEGNA C BEZ R
Citation
L. Selmi et al., CORRELATION BETWEEN SUBSTRATE HOT-ELECTRON ENERGY AND HOMOGENEOUS DEGRADATION IN N-MOSFETS, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1677-1679
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
9
Year of publication
1994
Pages
1677 - 1679
Database
ISI
SICI code
0018-9383(1994)41:9<1677:CBSHEA>2.0.ZU;2-V
Abstract
Experimental data of substrate hot-electron induced degradation in n-M OSFET's is analyzed by means of a simulation tool that uses an efficie nt nonlocal algorithm to calculate the electron energy distribution at the Si - SiO2 interface. Comparison between the bias dependence of th e damage due to small injected charges and that of the hot-carrier ene rgy distribution suggests that electrons with energy below the Si - Si O2 barrier play a dominant role in the early stages of device degradat ion.