GROWTH AND CHARACTERIZATION OF (111)B INGAAS GAAS MULTIQUANTUM-WELL PIN DIODE STRUCTURES/

High quality piezoelectric strained InGaAs/GaAs multi-quantum well str uctures on (111)B GaAs substrates have been grown by solid-source mole cular beam epitaxy in a PIN configuration. 10K photoluminescence (PL) shows narrow peaks with widths as low as 3 meV for a 25-period structu re while room temperature (RT) PL shows several higher order peaks, no rmally forbidden, indicating breaking of inversion symmetry by the pie zoelectric field. Furthermore, both the 10K PL peak position and the f orm of the RT PL spectra depend on the number of quantum wells within the intrinsic region, suggesting that the electric-field distribution is altered thereby. Diodes fabricated from these structures had sharp avalanche breakdown voltages (V(bd)) and leakage currents as low as 8 x 10(-6) A/cm2 at 0.95 V(bd), indicating quality as high as in (100) d evices.